RU6051L n-channel advanced power mosfet symbol rating unit v dss 60 v gss 20 t j 175 c t stg -55 to 175 c i s t c =25c 50 a i dp t c =25c 200 a t c =25c 50 t c =100c 36 t c =25c 71 t c =100c 36 r ? jc 2.1 c/w r ? ja 100 c/w e as 100 mj shenzhen city ruichips semiconductor co., ltd rev. a? jul., 2018 1 www.ruichips.com thermal resistance-junction to case thermal resistance-junction to ambient drain-source avalanche ratings avalanche energy, single pulsed i d p d a w continuous drain current(v gs =10v) maximum power dissipation maximum junction temperature storage temperature range diode continuous forward current mounted on large heat sink 300 s pulse drain current tested absolute maximum ratings parameter common ratings (t c =25c unless otherwise noted) drain-source voltage gate-source voltage v features pin description to252 applications n-channel mosfet ? 60v/50a, r ds (on) =10m ? (typ.)@vgs=10v r ds (on) =12m ? (typ.)@vgs=4.5v ? super high dense cell design ? ultra low on-resistance ? 100% avalanche tested ? lead free and green devices available (rohs compliant) ? power management. ? switch applications. ? load switch g s d d s g
RU6051L min. typ. max. bv dss drain-source breakdown voltage 60 v 1 t j =125c 30 v gs(th) gate threshold voltage 1 3 v i gss gate leakage current 100 na 10 14 m ? 12 18 m ? v sd diode forward voltage 1.2 v t rr reverse recovery time 32 ns q rr reverse recovery charge 39 nc r g gate resistance 1.6 ? c iss input capacitance 1670 c oss output capacitance 340 c rss reverse transfer capacitance 145 t d(on) turn-on delay time 10 t r turn-on rise time 86 t d(off) turn-off delay time 34 t f turn-off fall time 26 q g total gate charge 25 q gs gate-source charge 9 q gd gate-drain charge 8 notes: shenzhen city ruichips semiconductor co., ltd rev. a? jul., 2018 2 www.ruichips.com nc test condition v dd =30v,i ds =50a, v gen =10v,r g =0.5 ? v ds =48v, v gs =10v, i ds =50a pulse width limited by safe operating area. calculated continuous current based on maximum allowable junc tion temperature. limited by tjmax, ias =20a, vdd = 32v, rg = 50 , starting tj = 25c. pulse test;pulse width300s, duty cycle2%. guaranteed by design, not subject to production testing. i sd =50a, dl sd /dt=100a/s v gs =0v, v ds =30v, frequency=1.0mhz v gs =10v, i ds =50a drain-source on-state resistance dynamic characteristics v gs =0v,v ds =0v,f=1mhz gate charge characteristics symbol i dss parameter zero gate voltage drain current pf ns r ds(on) v ds =v gs , i ds =250a v gs =20v, v ds =0v v gs =4.5v, i ds =35a diode characteristics i sd =50a, v gs =0v electrical characteristics (t c =25c unless otherwise noted) RU6051L static characteristics v gs =0v, i ds =250a v ds =60v, v gs =0v unit a
RU6051L device marking package packaging quantity reel size tape width RU6051L RU6051L to252 tape&reel 2500 13'' 16mm shenzhen city ruichips semiconductor co., ltd rev. a? jul., 2018 3 www.ruichips.com ordering and marking information
RU6051L shenzhen city ruichips semiconductor co., ltd rev. a? jul., 2018 4 www.ruichips.com typical characteristics 0 5 10 15 20 25 30 35 40 45 25 50 75 100 125 150 175 i d - drain current (a) t j - junction temperature ( c) drain current vgs=10v 0 8 16 24 32 40 012345678910 r ds(on) - on - resistance (m ? ) v gs - gate-source voltage (v) drain current ids=50a 0 10 20 30 40 50 60 70 80 0 25 50 75 100 125 150 175 p d -power (w) t j - junction temperature ( c) power dissipation 0.1 1 10 100 1000 0.1 1 10 100 1000 i d - drain current (a) v ds - drain-source voltage (v) safe operation area 10s 100s 1ms 10ms dc r ds(on) limited t c =25c 0.001 0.01 0.1 1 10 1e-05 0.0001 0.001 0.01 0.1 1 10 zthjc - thermal response (c/w) square wave pulse duration (sec) thermal transient impedance single pulse duty=0.5, 0.2, 0.1, 0.05, 0.02, 0.01, single pulse r jc = 2.1c/w
RU6051L shenzhen city ruichips semiconductor co., ltd rev. a? jul., 2018 5 www.ruichips.com typical characteristics 0 30 60 90 120 012345 i d - drain current (a) v ds - drain-source voltage (v) output characteristics 3v 3.5v 4.5v vgs=8,9,10v 0 10 20 30 40 50 0 20406080100 r ds(on) - on resistance (m ? ) i d - drain current (a) drain-source on resistance 10v 4.5v 0.0 0.5 1.0 1.5 2.0 2.5 -50 -25 0 25 50 75 100 125 150 175 normalized on resistance t j - junction temperature ( c) drain-source on resistance v gs =10v i ds =50a t j =25c rds(on)=10m ? 0.01 0.1 1 10 100 0.2 0.4 0.6 0.8 1 1.2 1.4 i s - source current (a) v sd - source-drain voltage (v) source-drain diode forward t j =25c t j =150c 0 500 1000 1500 2000 2500 3000 110100 c - capacitance (pf) v ds - drain-source voltage (v) capacitance ciss coss crss frequency=1.0mhz 0 1 2 3 4 5 6 7 8 9 10 0 5 10 15 20 25 v gs - gate-source voltage (v) q g - gate charge (nc) gate charge vds=48v ids=50a
RU6051L shenzhen city ruichips semiconductor co., ltd rev. a? jul., 2018 6 www.ruichips.com avalanche test circuit and waveforms switching time test circuit and waveforms
RU6051L shenzhen city ruichips semiconductor co., ltd rev. a? jul., 2018 7 www.ruichips.com package information to252 min nom max min nom max a 2.200 2.300 2.400 0.087 0.091 0.094 a1 * * 0.100 * * 0.004 b 0.660 0.760 0.860 0.026 0.030 0.034 b3 5.130 5.295 5.460 0.202 0.208 0.215 c 0.470 0.535 0.600 0.019 0.021 0.024 d 6.000 6.100 6.200 0.236 0.240 0.244 d1 e 6.500 6.600 6.700 0.256 0.260 0.264 e1 4.700 4.810 4.920 0.185 0.189 0.194 e h 9.800 10.100 10.400 0.386 0.398 0.409 l 1.400 1.550 1.700 0.055 0.061 0.067 l1 l2 l3 0.900 1.075 1.250 0.035 0.042 0.049 l4 0.600 0.800 1.000 0.024 0.031 0.039 0 * 8 0 * 8 1 5 7 9 5 7 9 2 5 7 9 5 7 9 0.510 bsc 0.020 bsc symbol mm inch 2.28 ref 0.09 ref 5.30 ref 0.20 ref 2.743 ref 0.108 ref 1 1 2 1
RU6051L shenzhen city ruichips semiconductor co., ltd rev. a? jul., 2018 8 www.ruichips.com customer service worldwide sales and service: sales@ruichips.com technical support: technical@ruichips.com investor relations contacts: investor@ruichips.com marcom contact: marcom@ruichips.com editorial contact: editorial@ruichips.comm hr contact: hr@ruichips.com legal contact: legal@ruichips.com shen zhen ruichips semiconductor co., ltd 4th floor, block 8, changyuan new material port, keyuan middle road, science & industry park, nanshan district, shenzhen, china tel: (86-755) 8311-5334 fax: (86-755) 8311-4278 e-mail: sales-sz@ruichips.com
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